inchange semiconductor isc product specification isc website www.iscsemi.cn isc thyristors TIC106D applications 5a contimunous on-state current 30a surge-current glass passivated max i gt of 200 a absolute maximum ratings(t a =25 ) symbol parameter min unit v drm repetitive peak off-state voltage 400 v v rrm repetitive peak reverse voltage 400 v i t(av) on-state current tc=80 3.2 a i t(rms) rms on-state current tc=80 5 a i tm surge peak on-state current 30 a p gm peak gate power p w 300 s 1.3 w p g(av) average gate power 0.3 w t j operating junction temperature 110 t stg storage temperature -40 ~+125 r th(j-c) thermal resistance, junction to case 1.9 /w r th(j-a) thermal resistance, junction to ambient 62.5 /w electrical characteristics (t c =25 unless otherwise specified) symbol parameter conditions min typ. max unit i rrm repetitive peak reverse current v rm =v rrm , v rm =v rrm , tj=110 0.4 1.0 ma i drm repetitive peak off-state current v dm =v drm , v dm =v drm , tj=110 0.4 1.0 ma v tm on-state voltage i tm = 5a 1.7 v i gt gate-trigger current v aa =6v; r l =1k 200 a v gt gate-trigger voltage v aa =6v; r l =100 1.0 v i h holding current v aa =6v; r gk =1k , i t = 10ma 5 ma
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